This inventor holds 1 USPTO granted patent. Top assignee: Varian Semiconductor Equipment Associates, Inc.. Active years: 2018.
Company Filing History:
Years Active: 2018
Title: Matt Mosher - Innovator in Ion Beam Technology
Introduction
Matt Mosher is a notable inventor based in Gloucester, MA (US). He has made significant contributions to the field of ion beam technology, particularly through his innovative patent that addresses ion beam extraction stability and current.
Latest Patents
Matt Mosher holds a patent titled "Source housing assembly for controlling ion beam extraction stability and ion beam current." This patent presents approaches for enhancing ion beam extraction stability and current in an ion extraction system. The invention features a source housing that surrounds an ion source, including an arc chamber, with an extraction aperture plate mounted at its proximal end. Additionally, a vacuum liner is integrated within the source housing to create a barrier around vacuum pumping apertures. This design ensures that only ions produced within the arc chamber exit through the extraction aperture plate, effectively containing extraneous ions.
Career Highlights
Matt Mosher is associated with Varian Semiconductor Equipment Associates, Inc., where he applies his expertise in ion beam technology. His work has contributed to advancements in semiconductor manufacturing processes, enhancing the efficiency and effectiveness of ion beam systems.
Collaborations
Some of Matt Mosher's coworkers include Shengwu Chang and Jeff Burgess. Their collaborative efforts in the field of ion beam technology have furthered the development of innovative solutions.
Conclusion
Matt Mosher's contributions to ion beam technology through his patent and work at Varian Semiconductor Equipment Associates, Inc. highlight his role as an influential inventor in this specialized field. His innovations continue to impact the semiconductor industry positively.