The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
May. 15, 2015
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Jeff Burgess, Manchester, MA (US);
William Leavitt, Haverill, MA (US);
Michael St Peter, Gloucester, MA (US);
Matt Mosher, Gloucester, MA (US);
Joe Olson, Beverly, MA (US);
Frank Sinclair, Boston, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Provided herein are approaches for improving ion beam extraction stability and ion beam current for an ion extraction system. In one approach, a source housing assembly may include a source housing surrounding an ion source including an arc chamber, the source housing having an extraction aperture plate mounted at a proximal end thereof. The source housing assembly further includes a vacuum liner disposed within an interior of the source housing to form a barrier around a set of vacuum pumping apertures. As configured, openings in the source housing assembly, other than an opening in the extraction aperture plate, are enclosed by the extraction aperture plate and the vacuum liner, thus ensuring appendix arcs or extraneous ions produced outside the arc chamber remain within the source housing. Just those ions produced within the arc chamber exit the source housing through the opening of the extraction aperture plate.