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For the Inventor, By the Inventor

Mihara, Japan

Masaya Ishida

This inventor holds 18 USPTO granted patents and 1 EPO patent, primarily in Nitride Semiconductor Devices. Top assignees: Sharp Kabushiki Kaisha Corporation, Sumitomo Electric Industries, Limited. Active years: 2001-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaya Ishida. Retrieved from https://idiyas.com/inventor/masaya-ishida-gjtfpaeo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18

% Patents Active = 77.8


Average Co-Inventor Count = 2.8

ph-index = 7

Forward Citations = 122(Granted Patents)


Location History:

  • Nara, JP (2001)
  • Kashiba, JP (2001 - 2007)
  • Kashihara, JP (2008 - 2011)
  • Mihara, JP (2006 - 2012)
  • Sakai, JP (2022)

Company Filing History:

goldMedal18 out of 25,974 
 
Sharp Kabushiki Kaisha Corporation
 patents
silverMedal1 out of 10,647 
 
Sumitomo Electric Industries, Limited
 patents
where one patent can have more than one assignee

Years Active: 2001-2022

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Areas of Expertise:
Nitride Semiconductor
Light-Emitting Apparatus
Laser Element
Semiconductor Device
Phosphorescent Portion
III-V Compound
Light Emitting Device
P-Type Dopants
Manufacturing Method
Laser Light Source
Fabrication Method
Nitride Compound
18 patents (USPTO):Explore Patents
1. 11462887 - Laser element (2022-10-04),
2. 8287760 - Light-emitting apparatus, phosphorescent portion, and method of producing the same (2012-10-16),
3. 8253240 - Cap member and semiconductor device employing same (2012-08-28),
4. 7939433 - Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source (2011-05-10),
5. 7833834 - Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source (2010-11-16),
6. 7790484 - Method for manufacturing laser devices (2010-09-07),
7. 7700001 - Light-emitting apparatus, phosphor and method of producing it (2010-04-20),
8. 7691729 - Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source (2010-04-06),
9. 7656916 - Semiconductor light emitting device and method for fabricating same (2010-02-02),
10. 7573924 - Nitride semiconductor laser device (2009-08-11),
11. 7327770 - Nitride semiconductor laser device (2008-02-05),
12. 7182811 - Semiconductor light emitting device and method for producing the same (2007-02-27),
13. 7058103 - Light-emitting apparatus, phosphor, and method of producing it (2006-06-06),
14. 6806507 - Semiconductor light emitting device and method for producing the same (2004-10-19),
15. 6518602 - Nitride compound semiconductor light emitting device and method for producing the same (2003-02-11),

Title: The Innovative Journey of Masaya Ishida

Introduction: Masaya Ishida, a talented inventor hailing from Mihara, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Masaya Ishida holds several recent patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his commitment to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Masaya Ishida has worked with leading tech companies in Japan, spearheading research and development projects that have led to the creation of cutting-edge products and solutions.

Collaborations: Throughout his career, Masaya Ishida has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing in the industry.

Conclusion: Masaya Ishida's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology, inspiring the next generation of inventors to dream big and create a better future through their inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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