Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Masaya Ishida

Daisuke Hanaoka

Mototaka Taneya

Atsushi Ogawa

Takatomo Sasaki

Tatsuya Morioka

Yusuke Mori

Yoshihiko Tani

Yoichi Kawakami

Shigeo Fujita

Takuro Ishikura

Masafumi Harada

Masanori Watanabe

Yuhzoh Tsuda

Takeshi Kamikawa

Kensaku Motoki

Shiro Sakai

Takayuki Yuasa

Kunihiro Takatani

Fumihiro Konushi

Takeshi Horiguchi

Yoshiro Akagi

Tatsuya Ryowa

Yukiko Morishita

Takuya Nishida

Nobuhiro Okubo

A laser element includes a light emitting portion that has at least two or more light emitting points, and a terminal member on which the light emitting portion is mounted. The terminal member includes a base portion that has a mounting surface on which the light emitting portion is mounted, a base that has a front surface where the base portion is provided substantially at a center, and four pins that extend from a rear surface of the base. The light emitting portion is positioned in a range surrounded by the four pins as viewed from the front surface of the base.

Laser element

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphorescent portion, and method of producing the same

A cap member capable of alleviating degradation of reliability and improving fabrication yields is provided. The cap member has a cylindrical side wall portion, a top face portion closing one end of the side wall portion and having a light exit hole formed therein to allow extraction of laser light from a semiconductor laser chip; a light transmission window fitted to the top face portion to stop the light exit hole, and a flange portion arranged at the other end of the side wall portion and welded on the upper face of a stem on which the semiconductor laser chip is mounted. A groove portion is formed in an inner surface of the top face portion, and this groove portion makes part of the top face portion in a predetermined region less thick than the other part thereof.

Cap member and semiconductor device employing same

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source

A method for manufacturing a laser device includes fixing a laser chip to a holder via a metal having a low melting point by melting the metal at a temperature higher than the melting point, heating the holder to which the laser chip is fixed at a heat treatment temperature that is lower than the melting point and, thereafter, sealing the laser chip by covering the holder to which the laser chip is fixed with a cap. The heating step may be performed in an atmosphere in which ozone is generated or an atmosphere in which oxygen plasma is generated. Furthermore, the holder to which the laser chip is fixed is covered with a cap to make a hermetically sealed package in dry air or an inert gas, and then an ultraviolet ray is irradiated into the package while it is heated.

Method for manufacturing laser devices

Light-emitting apparatus, phosphor and method of producing it

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Semiconductor light emitting device and method for fabricating same

A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most &#x2212;30&#xb0; C. and an oxygen concentration of at most 100 ppm.

Nitride semiconductor laser device

To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire () is bonded to an electrode () formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.

A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InGaAlN (0&#x2266;x, 0&#x2266;y, x+y&#x3c;1) and a plurality of barrier layers each made of InGaAlN (0&#x2266;s, 0&#x2266;t, s+t&#x3c;1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1&#xd7;10atoms/cmand less than or equal to about 1&#xd7;10atoms/cm.

Semiconductor light emitting device and method for producing the same

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III&#x2013;V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphor, and method of producing it

A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of In Ga Al N (0&lE;x, 0&lE;y, x&plus;y<1) and a plurality of barrier layers each made of In Ga Al N (0&lE;s, 0&lE;t, s&plus;t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1&times;10 atoms/cm and less than or equal to about 1&times;10 atoms/cm .

A nitride compound semiconductor light emitting device of the present invention includes: a nitride compound semiconductor substrate; and a light emitting device section including a nitride compound semiconductor provided on the nitride compound semiconductor substrate. The nitride compound semiconductor substrate contains a group VII element as an impurity.

Growing community of inventors

Mihara, Japan

Masaya Ishida