The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Aug. 16, 2007
Daisuke Hanaoka, Kyoto, JP;
Masaya Ishida, Kashihara, JP;
Atsushi Ogawa, Higashihiroshima, JP;
Yoshihiko Tani, Mihara, JP;
Takuro Ishikura, Kashihara, JP;
Daisuke Hanaoka, Kyoto, JP;
Masaya Ishida, Kashihara, JP;
Atsushi Ogawa, Higashihiroshima, JP;
Yoshihiko Tani, Mihara, JP;
Takuro Ishikura, Kashihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor, laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.