Masatoshi Wakagi

Title: Masatoshi Wakagi: Innovator in Semiconductor Technology

Introduction

Masatoshi Wakagi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Wakagi holds a patent for a semiconductor device, a method for manufacturing the same, and a power conversion system. This invention features an anode electrode and a cathode electrode formed on a silicon semiconductor substrate. It includes a p-type layer adjacent to the anode electrode and an n-type layer next to the cathode electrode, achieved by diffusing a V-group element. Additionally, an n-layer is formed between the p-type layer and the n-type layer, along with an n-buffer layer containing oxygen. The oxygen concentration in a specified area from the surface of the n-type layer is set to 1×10 cm or more, while the concentration of the n-layer in contact with the p-type layer is maintained at less than 3×10 cm.

Career Highlights

Wakagi is currently employed at Hitachi Power Semiconductor Device, Ltd., where he continues to advance semiconductor technology. His work has been instrumental in developing efficient power conversion systems that are crucial for modern electronic devices.

Collaborations

Wakagi has collaborated with notable colleagues, including Taiga Arai and Mutsuhiro Mori, who have contributed to his research and development efforts in the semiconductor field.

Conclusion

Masatoshi Wakagi's innovative work in semiconductor technology exemplifies the importance of research and development in advancing electronic systems. His contributions continue to impact the industry positively.