Hitachi Power Semiconductor Device, Ltd.

Masatoshi Wakagi

Mutsuhiro Mori

Tetsuya Ishimaru

Tomoyasu Furukawa

Taiga Arai

An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an nlayer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the nlayer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 &#x3bc;m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1&#xd7;10cmor more and also the oxygen concentration of the nlayer in a position in contact with the p-type layer is set to less than 3&#xd7;10cm.

Growing community of inventors

Tokyo, Japan

Masatoshi Wakagi