The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Sep. 05, 2017
Hitachi Power Semiconductor Device, Ltd., Hitachi-shi, Ibaraki, JP;
Masatoshi Wakagi, Tokyo, JP;
Taiga Arai, Tokyo, JP;
Mutsuhiro Mori, Tokyo, JP;
Tomoyasu Furukawa, Tokyo, JP;
Hitachi Power Semiconductor Device Ltd., Ibaraki, JP;
Abstract
An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an nlayer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the nlayer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 μm from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×10cmor more and also the oxygen concentration of the nlayer in a position in contact with the p-type layer is set to less than 3×10cm.