Chiyoda-ku, Japan

Masatoshi Iwata


Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Chiyoda-ku, JP (2011 - 2012)
  • Tokyo, JP (2012)
  • Akita, JP (2017)

Company Filing History:


Years Active: 2011-2025

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Masatoshi Iwata

Introduction

Masatoshi Iwata is a prominent inventor based in Chiyoda-ku, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 6 patents to his name, Iwata's work centers around advancements in light-emitting diodes and semiconductor materials, showcasing his expertise and innovative approach in this competitive industry.

Latest Patents

One of Masatoshi Iwata's latest inventions is a point source light-emitting diode, which comprises a substrate, an n-type cladding layer, a light emitting layer, a p-type cladding layer, an n-type current confinement layer, and a p-type contact layer. This design features a p-type electrode with a light emission window that is concentric with an opening, demonstrating advanced engineering in the diode's structure. Additionally, a hydrogen ion implanted area extends from the p-type contact layer to the light emitting layer, creating a non-implanted region that enhances performance while enclosing an implanted region.

Another notable patent by Iwata involves the development of a III nitride semiconductor epitaxial substrate that addresses challenges in surface flatness and crack formation. Utilizing optimal Si doping conditions on an AlN layer, this innovation results in improved electronic properties. The substrate includes a structure with an undoped AlN layer and a Si-doped AlN buffer layer, further establishing Iwata’s role as a key player in the advancement of III nitride semiconductor light emitting devices.

Career Highlights

Iwata's contributions at Dowa Electronics Materials Co., Ltd. signify his commitment to research and development in semiconductor technologies. His patented innovations highlight a consistent focus on enhancing device performance and manufacturing methodologies. His body of work not only reflects technical skill but also a deep understanding of the industry's needs and future directions.

Collaborations

Throughout his career, Masatoshi Iwata has collaborated with notable colleagues, including Ryo Sakamoto and Yoshiyuki Kobayashi. These partnerships have fostered a creative environment, encouraging the exchange of ideas and leading to the successful development of multiple patented technologies.

Conclusion

In summary, Masatoshi Iwata exemplifies the spirit of innovation within the semiconductor sector. His most recent patents demonstrate a commitment to advancing light-emitting technology and materials science. As he continues to work with Dowa Electronics Materials Co., Ltd. and engage with competent colleagues, Iwata's contributions to the field will undoubtedly impact future developments and perpetuate the growth of innovative semiconductor applications.

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