Dowa Electronics Materials Co., Ltd.

Masatoshi Iwata

Ryo Sakamoto

Yoshiyuki Kobayashi

Tetsuya Matsuura

Yoshikazu Ooshika

Norio Tasaki

Shinya Shoji

Naruki Shindo

Susumu Tsujikawa

The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 μm and 3.0 μm inclusive.

Point source type light-emitting diode and manufacturing method thereof

The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.

Point source light-emitting diode and method of producing the same

A III nitride semiconductor epitaxial substrate having more excellent surface flatness is provided, in which the problems of crack formation and the double peaks in the shape of the EL spectrum are mitigated by employing appropriate conditions for Si doping on an AlN layer on a substrate; a III nitride semiconductor light emitting device; and methods of producing the same. A III nitride semiconductor epitaxial substrate has a substrate of which at least a surface portion is made of AlN, an undoped AlN layer formed on the substrate, an Si-doped AlN buffer layer formed on the undoped AlN layer, and a superlattice laminate formed on the Si-doped AlN buffer layer. The Si-doped AlN buffer layer has an Si concentration of 2.0&#xd7;10/cmor more and a thickness of 4 nm to 10 nm.

III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the same

A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film.

Light-emitting element

A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer, and a first reflector layerat its light reflecting side and a second reflector layerat its light emitting side which are formed to sandwich the active laterbetween them, wherein each of the first reflector layerand the second reflector layeris structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layerhas a number of such pairs which is not less than 1/10 and not more than &#x2153; of that which said first reflector layerhas. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

Vertical resonator type light emitting diode

A light-emitting device () is provided having a current blocking layer () of buried structure, a portion of the current blocking layer () having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer () below the current blocking layer (), the etching stop layer being good in oxidation resistance. The light-emitting device () and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

Light-emitting device and manufacturing method of the same

Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layerin which a quantum well layerand a barrier layerare alternately laminated; and reflective layers disposed both above and below the active layer, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is &#x3bb;, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition of

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Chiyoda-ku, Japan

Masatoshi Iwata