Location History:
- Chiba, JP (2009)
- Ichihara, JP (2008 - 2010)
Company Filing History:
Years Active: 2008-2010
Title: Masato Kobayakawa: Innovator in Gallium Nitride Semiconductor Technology
Introduction
Masato Kobayakawa is a prominent inventor based in Ichihara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in gallium nitride-based compounds. With a total of 8 patents to his name, Kobayakawa continues to push the boundaries of innovation in this critical area of research.
Latest Patents
Kobayakawa's latest patents include groundbreaking inventions such as a gallium nitride-based compound semiconductor multilayer structure and a production method for it. This invention aims to provide a gallium nitride compound semiconductor multilayer structure that is useful for producing light-emitting devices operating at low voltage while maintaining satisfactory light emission output. The structure comprises a substrate, an n-type layer, a light-emitting layer, and a p-type layer, with the light-emitting layer featuring a multiple quantum well structure.
Another notable patent is the n-type group III nitride semiconductor layered structure. This invention focuses on creating a low-resistance n-type Group III nitride semiconductor layered structure that exhibits excellent flatness and minimal defects. The structure includes a substrate and an n-type impurity concentration periodic variation layer, which enhances its performance.
Career Highlights
Kobayakawa is currently employed at Showa Denko K.K., where he continues to develop innovative semiconductor technologies. His work has been instrumental in advancing the capabilities of gallium nitride semiconductors, which are essential for various electronic applications.
Collaborations
Throughout his career, Kobayakawa has collaborated with notable colleagues, including Hisayuki Miki and Hideki Tomozawa. These collaborations have further enriched his research and development efforts in the semiconductor field.
Conclusion
Masato Kobayakawa is a key figure in the advancement of gallium nitride semiconductor technology. His innovative patents and contributions to the field highlight his commitment to enhancing electronic device performance. His work continues to inspire future developments in semiconductor research.