The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Apr. 27, 2005
Akira Bandoh, Ichihara, JP;
Hiromitsu Sakai, Ichihara, JP;
Masato Kobayakawa, Ichihara, JP;
Mineo Okuyama, Ichihara, JP;
Hideki Tomozawa, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Joseph Gaze, Ichihara, JP;
Syunji Horikawa, Tokyo, JP;
Tetsuo Sakurai, Ichihara, JP;
Akira Bandoh, Ichihara, JP;
Hiromitsu Sakai, Ichihara, JP;
Masato Kobayakawa, Ichihara, JP;
Mineo Okuyama, Ichihara, JP;
Hideki Tomozawa, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Joseph Gaze, Ichihara, JP;
Syunji Horikawa, Tokyo, JP;
Tetsuo Sakurai, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.