The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Sep. 12, 2005
Masato Kobayakawa, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Masato Kobayakawa, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile