The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Nov. 04, 2004
Applicant:
Masato Kobayakawa, Chiba, JP;
Inventor:
Masato Kobayakawa, Chiba, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An object of the present invention is to provide an efficient method for manufacturing a p-type group III nitride semiconductor that has adequate carrier concentration and a surface with a low occurrence of crystal damage. The inventive method for manufacturing a p-type group III nitride semiconductor comprises: (a) growing a group III nitride semiconductor containing a p-type dopant at 1000° C. or higher in an atmosphere containing Hgas and/or NHgas; and (b) after the growth of the group III nitride semiconductor, substituting the Hgas and NHgas with an inert gas at a temperature higher than 800° C. while reducing the temperature.