Company Filing History:
Years Active: 2024-2025
Title: Masato Ito: Innovator in SiC Substrate Technology
Introduction
Masato Ito is a prominent inventor based in Ichihara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) substrates. With a total of four patents to his name, Ito's work is recognized for its innovative approaches and technical advancements.
Latest Patents
Masato Ito's latest patents focus on SiC substrates and SiC ingots. One of his notable inventions involves a SiC substrate where resistivities at multiple first measurement points are analyzed. These points are located within a boundary 5 mm inward from the outer circumferential end. The invention specifies that the difference between the maximum and minimum resistivity among these points should be 0.5 mΩ·cm or less, with a diameter of 149 mm or more. Additionally, another aspect of his patent addresses the absorption coefficient for light with a wavelength of 1064 nm, ensuring that 70% or more of the total area meets specific criteria.
Career Highlights
Masato Ito is currently employed at Resonac Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the applications of SiC materials in various industries, including electronics and power devices.
Collaborations
Ito collaborates with Hiromasa Suo, contributing to the innovative projects at Resonac Corporation. Their combined expertise enhances the development of cutting-edge technologies in the semiconductor field.
Conclusion
Masato Ito's contributions to SiC substrate technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of semiconductor materials and their applications. Through his work at Resonac Corporation, Ito continues to influence the future of technology in significant ways.