Resonac Corporation

Masato Ito

Hiromasa Suo

In a SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 0.5 mΩ·cm or less, and the diameter is 149 mm or more.

SiC substrate and SiC ingot

In a SiC substrate according to the present embodiment, a proportion of a first region in which a difference between a maximum value and a minimum value of absorption coefficient for light having a wavelength of 1064 nm is 0.25 cmor less is 70% or more of the total area.

In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cmor less.

In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 mΩ·cm or less, and a region other than a high nitrogen concentration region called a facet is included.

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Ichihara, Japan

Masato Ito