Otsu, Japan

Masaru Ikebe

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Nippon Electric Glass Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaru Ikebe. Retrieved from https://idiyas.com/inventor/masaru-ikebe-d71xhsag

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2015

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Masaru Ikebe: Innovator in Semiconductor Technology

Introduction

Masaru Ikebe is a prominent inventor based in Otsu, Japan. He is known for his contributions to semiconductor technology, particularly in the development of dopant hosts. His innovative work has led to significant advancements in the field.

Latest Patents

Masaru Ikebe holds a patent for a dopant host that includes specific compositions of SiO, AlO, BO, and RO. The patent outlines a process for producing a boron dopant for semiconductors, which involves slurrying a starting material powder, preparing a green sheet, and sintering it. This invention is crucial for enhancing the performance of semiconductor devices.

Career Highlights

Ikebe is associated with Nippon Electric Glass Co., Ltd., where he has made substantial contributions to the company's research and development efforts. His work has been instrumental in advancing the technology used in semiconductor manufacturing.

Collaborations

Masaru Ikebe has collaborated with notable colleagues, including Yoshio Umayahara and Ryota Suzuki. These partnerships have fostered innovation and have been vital in the development of new technologies in the semiconductor industry.

Conclusion

Masaru Ikebe's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor manufacturing and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…