The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jan. 24, 2014
Nippon Electric Glass Co., Ltd., Otsu, JP;
Yoshio Umayahara, Otsu, JP;
Ryota Suzuki, Otsu, JP;
Yoshikatsu Nishikawa, Otsu, JP;
Masaru Ikebe, Otsu, JP;
Hiroki Mori, Otsu, JP;
Yoshinori Hasegawa, Otsu, JP;
Nippon Electric Glass Co., Ltd., Otsu, JP;
Abstract
A dopant host containing, in terms of mole %, 20 to 50% SiO, 30 to 60% (exclusive of 30%) AlO, 10 to 40% BO, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO, 10 to 30% AlO, 15 to 50% BO, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO, 50 to 85% AlO, 5 to 20% BO, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.