Nippon Electric Glass Co., Ltd.

Masaru Ikebe

Hiroki Mori

Yoshio Umayahara

Yoshinori Hasegawa

Ryota Suzuki

Yoshikatsu Nishikawa

Hajime Hikata

A dopant host containing, in terms of mole %, 20 to 50% SiO, 30 to 60% (exclusive of 30%) AlO, 10 to 40% BO, and 2 to 10% RO, wherein R represents alkaline earth metal, or being a laminate including a boron component volatilization layer containing, in terms of mole %, 30 to 60% SiO, 10 to 30% AlO, 15 to 50% BO, and 2 to 10% RO, wherein R represents alkaline earth metal, and a heat resistant layer containing, in terms of mole %, 8 to 30% SiO, 50 to 85% AlO, 5 to 20% BO, and 0.5 to 7% RO, wherein R represents alkaline earth metal. A process for producing a boron dopant for a semiconductor including the steps of slurrying a starting material powder containing a boron-containing crystalline glass powder, forming the slurry to prepare a green sheet, and sintering the green sheet.

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Otsu, Japan

Masaru Ikebe