This inventor holds 1 USPTO granted patent. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Nisshin Denki Kaushiki Kaisha. Active years: 1992.
Company Filing History:
1 out of 21,351 
1 out of 1 Years Active: 1992
Title: Masao Naitou: Innovator in Ion Implantation Technology
Introduction
Masao Naitou is a distinguished inventor known for his contributions to the field of ion implantation technology. He is based in Kyoto, Japan, and has made significant advancements in the design and functionality of ion implantation apparatuses. His innovative work has led to the development of a patented technology that enhances the efficiency of ion implantation processes.
Latest Patents
Masao Naitou holds a patent for an ion implantation apparatus. This apparatus includes an ion source with an arc chamber that generates ions, along with a drawing electrode that draws ions from the arc chamber. It features a mass separator that transports only the desired ions for implantation, an ion implantation chamber where the material to be implanted is placed, and a controller that automatically adjusts the distance between the arc chamber and the drawing electrode based on theoretical calculations. This technology considers various factors such as the type of ions to be implanted, the accelerating voltage, and the ion current and current density distribution. Naitou's patent is a testament to his innovative approach in this specialized field.
Career Highlights
Throughout his career, Masao Naitou has worked with prominent companies, including Mitsubishi Electric Corporation and Nisshin Electric Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to significant advancements in ion implantation technology.
Collaborations
Masao Naitou has collaborated with notable professionals in his field, including Kazuhiko Noguchi and Kazuhiro Shono. These collaborations have further enriched his work and contributed to the development of innovative technologies in ion implantation.
Conclusion
Masao Naitou's contributions to ion implantation technology have made a lasting impact in the field. His patented innovations and collaborations with industry professionals highlight his dedication to advancing technology. His work continues to influence the development of efficient ion implantation processes.