Masanao Maruta

Title: Masanao Maruta: Innovator in Semiconductor Technology

Introduction

Masanao Maruta is a notable inventor based in Hyogo, Japan, recognized for his contributions to semiconductor technology. He holds a total of 4 patents, showcasing his innovative spirit and technical expertise in the field.

Latest Patents

One of his latest patents is a semiconductor integrated circuit device with an internal power supply potential generation circuit. This invention includes an overcharge prevention circuit connected to an internal power supply node. The overcharge prevention circuit features a signal output that is determined by the internal power supply potential, along with a differential amplification circuit that amplifies the potential difference between the signal and a reference potential. This design allows the semiconductor integrated circuit device to maintain a steady internal power supply potential. Another significant patent is for a semiconductor memory device that includes a column select line transmitting a column select signal. This device comprises first and second memory banks, each with multiple memory blocks and select lines to manage memory regions effectively.

Career Highlights

Throughout his career, Masanao Maruta has worked with prominent companies, including Renesas Technology Corporation. His work has significantly impacted the development of advanced semiconductor devices.

Collaborations

Masanao has collaborated with esteemed colleagues such as Hiroaki Tanizaki and Shigeki Tomishima, contributing to various innovative projects in the semiconductor industry.

Conclusion

Masanao Maruta's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in integrated circuit and memory device technologies.