Ibaraki, Japan

Masamitsu Hayashi

This inventor holds 2 USPTO granted patents. Top assignee: National Institute for Materials Science. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masamitsu Hayashi. Retrieved from https://idiyas.com/inventor/masamitsu-hayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 9.3

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Ibaraki, JP (2016)
  • Tsukuba, JP (2016)

Company Filing History:


Years Active: 2016

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2 patents (USPTO):Explore Patents

Title: Masamitsu Hayashi: Innovator in Spintronics

Introduction

Masamitsu Hayashi is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of materials science, particularly in the development of advanced magnetic materials and spintronics devices. With a total of 2 patents, his work is recognized for its innovative approaches and practical applications.

Latest Patents

Hayashi's latest patents include a "Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application." This invention provides an element structure where a magnetic layer possesses a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less. The invention details a BCC metal nitride/CoFeB/MgO film structure that utilizes a nitride of a BCC metal as a seed layer. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. This innovation allows for the creation of a perpendicularly magnetized film with exceptional magnetic properties, achieving a perpendicular magnetic anisotropy of 0.1×10 erg/cm or more and a saturated magnetization of 200 emu/cm or more, even when the thickness of the magnetic layer is between 0.3 nm and 1.5 nm.

Another notable patent focuses on the development of a CoFe-based Heusler alloy aimed at realizing high-performance spintronics devices. This invention provides a CoFe(GaGe) Heusler alloy that exhibits a spin polarization larger than 0.65, with a Curie temperature as high as 1288K. The resulting CPP-GMR device utilizing this alloy as an electrode demonstrates the world's highest MR ratio, while an STO device shows high output, and an NLSV device exhibits a significant spin signal.

Career Highlights

Masamitsu Hayashi is affiliated with the National Institute for Materials Science, where he conducts research and development in advanced materials. His work has been instrumental in pushing the boundaries of spintronics technology, contributing to the advancement of electronic devices that leverage spin properties for improved performance.

Collaborations

Hayashi has collaborated with notable colleagues, including Yukiko Takahashi and Takao Furubayashi

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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