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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9336937 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Jul. 03, 2013

[object object]

Applicant:

National Institute for Materials Science, Tsukuba-shi, Ibaraki, JP;

Inventors:

Yukiko Takahashi, Tsukuba, JP;

Srinivasan Ananthakrishnan, Tsukuba, JP;

Varaprasad Bollapragada, Tsukuba, JP;

Rajanikanth Ammanabrolu, Tsukuba, JP;

Jaivardhan Sinha, Tsukuba, JP;

Masamitsu Hayashi, Tsukuba, JP;

Takao Furubayashi, Tsukuba, JP;

Shinya Kasai, Tsukuba, JP;

Shigeyuki Hirayama, Tsukuba, JP;

Seiji Mitani, Tsukuba, JP;

Kazuhiro Hono, Tsukuba, JP;

Assignee:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Kevin Bernatz

Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01F 10/16 (2006.01); C22C 19/07 (2006.01); G01R 33/09 (2006.01); G01R 33/12 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01F 10/193 (2006.01); G11B 5/31 (2006.01); G11B 5/39 (2006.01); H01L 43/08 (2006.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
H01F 10/16 (2013.01); C22C 19/07 (2013.01); G01R 33/093 (2013.01); G01R 33/098 (2013.01); G01R 33/1284 (2013.01); G11B 5/313 (2013.01); G11B 5/3906 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01F 10/1936 (2013.01); H01F 10/329 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); B82Y 10/00 (2013.01); B82Y 25/00 (2013.01); H01F 10/325 (2013.01); Y10T 428/1121 (2015.01); Y10T 428/1129 (2015.01); Y10T 428/12611 (2015.01);
Abstract

To realize a spintronics device with high performance, it is an object of the present invention to provide a CoFe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A CoFe(GaGe) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the CoFe(GaGe) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

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