The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 22, 2013
National Institute for Materials Science, Ibaraki, JP;
Masamitsu Hayashi, Ibaraki, JP;
Sinha Jaivardhan, Ibaraki, JP;
Masaya Kodzuka, Ibaraki, JP;
Tomoya Nakatani, Ibaraki, JP;
Yukiko Takahashi, Ibaraki, JP;
Takao Furubayashi, Ibaraki, JP;
Seiji Mitani, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
National Institute for Materials Science, Ibaraki, JP;
Abstract
Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×10erg/cmor more and the saturated magnetization is 200 emu/cmor more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.