National Institute for Materials Science

Masamitsu Hayashi

Kazuhiro Hono

Seiji Mitani

Takao Furubayashi

Yukiko Takahashi

Tomoya Nakatani

Shinya Kasai

Masaya Kodzuka

Srinivasan Ananthakrishnan

Varaprasad Bollapragada

Rajanikanth Ammanabrolu

Jaivardhan Sinha

Shigeyuki Hirayama

Sinha Jaivardhan

Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1&#xd7;10erg/cmor more and the saturated magnetization is 200 emu/cmor more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application

To realize a spintronics device with high performance, it is an object of the present invention to provide a CoFe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A CoFe(GaGe) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25&#x3c;x&#x3c;0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the CoFe(GaGe) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

[object Object]

Growing community of inventors

Ibaraki, Japan

Masamitsu Hayashi