Masaki Inoue

Title: Masaki Inoue: Innovator in Semiconductor Technology

Introduction

Masaki Inoue is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Inoue's latest patents include a semiconductor device that features an active layer located in an SOI substrate, where an element included in a circuit is formed. This device also incorporates a buried insulation layer in contact with the active layer and a deep trench isolation (DTI) region that surrounds the formation region of the element. The DTI region contains a first hole, and the film thickness of the first conductive film is greater than that of the active layer. Another notable patent is a semiconductor device and method for fabricating the same, which includes a drift diffusion region, a body diffusion region, and a source diffusion region, among other components. This design aims to improve the overall functionality of semiconductor devices.

Career Highlights

Masaki Inoue has worked with notable companies such as Panasonic Corporation and Panasonic Intellectual Property Management Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Inoue has collaborated with talented individuals in his field, including Akira Ohdaira and Daigo Yamashina. These partnerships have contributed to the advancement of his projects and the successful development of his patents.

Conclusion

Masaki Inoue is a distinguished inventor whose work in semiconductor technology has led to several important patents. His contributions continue to influence the industry and pave the way for future innovations.