The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Mar. 06, 2018
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 21/8222 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 21/764 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 29/73 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/3205 (2013.01); H01L 21/76 (2013.01); H01L 21/762 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 21/76224 (2013.01); H01L 21/76264 (2013.01); H01L 21/76283 (2013.01); H01L 21/76289 (2013.01); H01L 21/822 (2013.01); H01L 21/8222 (2013.01); H01L 23/29 (2013.01); H01L 23/31 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 23/3157 (2013.01); H01L 27/1203 (2013.01); H01L 29/0653 (2013.01); H01L 29/735 (2013.01); H01L 29/7317 (2013.01);
Abstract
A semiconductor device includes: an active layer that is located in an SOI substrate, and in which an element included in a circuit is formed; a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer; a deep trench isolation (DTI) region that is formed in the active layer to surround a whole formation region of the element in plan view, and extends from an upper surface to a lower surface of the active layer; and a first conductive film formed above the element. The DTI region has a first hole inside, and a film thickness of the first conductive film is greater than a thickness of the active layer.