Shinya Natsume

Title: Shinya Natsume: Innovator in Semiconductor Technology

Introduction

Shinya Natsume is a prominent inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design and manufacturing.

Latest Patents

Natsume's latest patents include a semiconductor device that features an active layer located in an SOI substrate, where an element included in a circuit is formed. This device incorporates a buried insulation layer in contact with the active layer and a deep trench isolation (DTI) region that surrounds the formation region of the element. The DTI region contains a first hole, and the film thickness of the first conductive film is greater than that of the active layer. Another notable patent is for a dielectric memory and its manufacturing method, which utilizes a multilayer film formed by a metal nitride and a noble metal element as an oxygen diffusion prevention layer. This patent also describes the use of a plasma CVD oxide film as an interlayer insulation film on the oxygen diffusion prevention layer, along with an ozone TEOS film on a capacitor.

Career Highlights

Throughout his career, Shinya Natsume has worked with notable companies, including Panasonic Intellectual Property Management Co., Ltd. and Panasonic Corporation. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Natsume has collaborated with esteemed colleagues such as Masaki Inoue and Mitsuo Tanaka. Their combined expertise has fostered innovation and development in their respective fields.

Conclusion

Shinya Natsume's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic devices and materials.