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For the Inventor, By the Inventor

Hyogo, Japan

Masahiro Yoneda

USPTO Granted Patents = 16

Average Co-Inventor Count = 1.5

ph-index = 8

Forward Citations = 228(Granted Patents)


Location History:

  • Hyogo, JP (1984 - 1994)
  • Itami, JP (1984 - 1994)

Company Filing History:

goldMedal16 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1984-1994

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16 patents (USPTO):Explore Patents
1. 5292401 - Method of forming a fine pattern (1994-03-08),
2. 5285092 - Semiconductor memory device having a stacked type capacitor and (1994-02-08),
3. 5277740 - Apparatus and method for forming a fine pattern (1994-01-11),
4. 5258266 - Method of forming minute patterns using positive chemically amplifying (1993-11-02),
5. 5228940 - Fine pattern forming apparatus (1993-07-20),
6. 5219781 - Method for manufacturing semiconductor memory device having a stacked (1993-06-15),
7. 5177574 - Semiconductor memory device having a stacked type capacitor and (1993-01-05),
8. 5175118 - Multiple layer electrode structure for semiconductor device and method (1992-12-29),
9. 5158861 - Method of forming minute patterns using chemically amplifying type resist (1992-10-27),
10. 5079617 - Multiple layer electrode structure for semiconductor device and method (1992-01-07),
11. 4984199 - Semiconductor memory cells having common contact hole (1991-01-08),
12. 4956692 - Semiconductor device having an isolation oxide film (1990-09-11),
13. 4929990 - Semiconductor memory device (1990-05-29),
14. 4887137 - Semiconductor memory device (1989-12-12),
15. 4465529 - Method of producing semiconductor device (1984-08-14),

Title: Masahiro Yoneda: Innovator in Semiconductor Technology

Introduction

Masahiro Yoneda is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His innovative work has paved the way for advancements in fine pattern formation and semiconductor memory devices.

Latest Patents

Yoneda's latest patents include a method of forming a fine pattern and a semiconductor memory device featuring a stacked type capacitor. The fine pattern forming apparatus he developed includes a stage and an opposed electrode, with at least one component made of a magnetic material. By applying a magnetic field, a predetermined gap is created, ensuring optimal etching conditions without generating dust. This innovation reduces damage caused by plasma and increases the etch rate. Additionally, his semiconductor memory device incorporates a planar type capacitor and a stacked type capacitor, enhancing capacitance without expanding the planar area of occupation.

Career Highlights

Masahiro Yoneda has had a distinguished career at Mitsubishi Electric Corporation, where he has been instrumental in developing cutting-edge technologies. His expertise in semiconductor devices has led to numerous advancements that benefit the industry.

Collaborations

Throughout his career, Yoneda has collaborated with notable colleagues, including Akira Tokui and Masahiro Hatanaka. These partnerships have fostered a creative environment that has resulted in innovative solutions in semiconductor technology.

Conclusion

Masahiro Yoneda's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in technology and improve the efficiency of semiconductor devices.

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