The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1984
Filed:
Jun. 04, 1982
Applicant:
Inventors:
Hideaki Arima, Hyogo, JP;
Tadashi Nishimura, Hyogo, JP;
Masahiro Yoneda, Hyogo, JP;
Takaaki Fukumoto, Hyogo, JP;
Yoshihiro Hirata, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148188 ; 148189 ; 427 39 ; 427 85 ; 427 88 ; 204164 ;
Abstract
A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.