Company Filing History:

15 out of 10,264

Sumitomo Electric Industries, Limited

where one patent can have more than one assignee

Years Active: 2005-2014

Loading Chart...

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8723219 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2014-05-13),

2. 8482032 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2013-07-09),

3. 8133815 - Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate (2012-03-13),

4. 8022438 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2011-09-20),

5. 8008165 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2011-08-30),

6. 7786488 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2010-08-31),

7. 7749325 - Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate (2010-07-06),

8. 7550780 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2009-06-23),

9. 7535082 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2009-05-19),

10. 7390747 - Nitride semiconductor substrate and method of producing same (2008-06-24),

11. 7387678 - GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same (2008-06-17),

12. 7195545 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2007-03-27),

13. 7154131 - Nitride semiconductor substrate and method of producing same (2006-12-26),

14. 6909165 - Obverse/reverse discriminative rectangular nitride semiconductor wafer (2005-06-21),

15. 6875082 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2005-04-05),

Title: Masahiro Nakayama: Pioneering Inventor from Hyogo, Japan

Introduction: Masahiro Nakayama is a renowned inventor hailing from the vibrant prefecture of Hyogo, Japan. With a passion for innovation and a keen eye for detail, he has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Masahiro Nakayama holds several patents in various technological domains, including robotics, artificial intelligence, and renewable energy. His recent patents focus on enhancing efficiency and sustainability in manufacturing processes.

Career Highlights: Throughout his illustrious career, Masahiro Nakayama has worked with leading tech companies in Japan, spearheading research and development projects that have pushed the boundaries of innovation. His commitment to excellence and forward-thinking approach have earned him recognition as a trailblazer in the industry.

Collaborations: Masahiro Nakayama has collaborated with top research institutions and universities in Japan to further his research and bring his inventions to life. His collaborative efforts have resulted in the development of cutting-edge technologies that have the potential to revolutionize various sectors.

Conclusion: Masahiro Nakayama's relentless pursuit of innovation and his dedication to creating impactful solutions have solidified his position as a visionary inventor in the tech world. His contributions continue to inspire the next generation of inventors and shape the future of technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com