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For the Inventor, By the Inventor

Hyogo, Japan

Masahiro Nakayama

This inventor holds 15 USPTO granted patents and 1 EPO patent. Top assignees: Sumitomo Electric Industries, Limited, Sony Corporation. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Nakayama. Retrieved from https://idiyas.com/inventor/masahiro-nakayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 46.7


Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 79(Granted Patents)


Location History:

  • Itami, JP (2008 - 2012)
  • Hyogo, JP (2005 - 2014)

Company Filing History:

goldMedal15 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal4 out of 58,145 
 
Sony Corporation
 patents
where one patent can have more than one assignee

Years Active: 2005-2014

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15 patents (USPTO):Explore Patents
1. 8723219 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2014-05-13),
2. 8482032 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2013-07-09),
3. 8133815 - Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate (2012-03-13),
4. 8022438 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2011-09-20),
5. 8008165 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2011-08-30),
6. 7786488 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2010-08-31),
7. 7749325 - Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate (2010-07-06),
8. 7550780 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2009-06-23),
9. 7535082 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2009-05-19),
10. 7390747 - Nitride semiconductor substrate and method of producing same (2008-06-24),
11. 7387678 - GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same (2008-06-17),
12. 7195545 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer (2007-03-27),
13. 7154131 - Nitride semiconductor substrate and method of producing same (2006-12-26),
14. 6909165 - Obverse/reverse discriminative rectangular nitride semiconductor wafer (2005-06-21),
15. 6875082 - Nitride semiconductor wafer and method of processing nitride semiconductor wafer (2005-04-05),

Title: Masahiro Nakayama: Pioneering Inventor from Hyogo, Japan

Introduction: Masahiro Nakayama is a renowned inventor hailing from the vibrant prefecture of Hyogo, Japan. With a passion for innovation and a keen eye for detail, he has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Masahiro Nakayama holds several patents in various technological domains, including robotics, artificial intelligence, and renewable energy. His recent patents focus on enhancing efficiency and sustainability in manufacturing processes.

Career Highlights: Throughout his illustrious career, Masahiro Nakayama has worked with leading tech companies in Japan, spearheading research and development projects that have pushed the boundaries of innovation. His commitment to excellence and forward-thinking approach have earned him recognition as a trailblazer in the industry.

Collaborations: Masahiro Nakayama has collaborated with top research institutions and universities in Japan to further his research and bring his inventions to life. His collaborative efforts have resulted in the development of cutting-edge technologies that have the potential to revolutionize various sectors.

Conclusion: Masahiro Nakayama's relentless pursuit of innovation and his dedication to creating impactful solutions have solidified his position as a visionary inventor in the tech world. His contributions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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