The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Jun. 25, 2004
Katsushi Akita, Itami, JP;
Eiryo Takasuka, Itami, JP;
Masahiro Nakayama, Itami, JP;
Masaki Ueno, Itami, JP;
Kouhei Miura, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Eiryo Takasuka, Itami, JP;
Masahiro Nakayama, Itami, JP;
Masaki Ueno, Itami, JP;
Kouhei Miura, Itami, JP;
Takashi Kyono, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A GaN substrate comprises a GaN single crystal substrate, an AlGaN intermediate layer (0<x≦1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate layer. The intermediate layer is made of AlGaN and this AlGaN grows over the entire surface of the substrate with contaminants thereon and high dislocation regions therein. Thus, the intermediate layer is normally grown on the substrate, and a growth surface of the intermediate layer can be made flat. Since the growth surface is flat, a growth surface of the GaN epitaxial layer epitaxially grown on the intermediate layer is also flat.