The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jul. 14, 2010
Applicants:
Masahiro Nakayama, Hyogo, JP;
Naoki Matsumoto, Hyogo, JP;
Koshi Tamamura, Tokyo, JP;
Masao Ikeda, Tokyo, JP;
Inventors:
Masahiro Nakayama, Hyogo, JP;
Naoki Matsumoto, Hyogo, JP;
Koshi Tamamura, Tokyo, JP;
Masao Ikeda, Tokyo, JP;
Assignees:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.