Tokyo, Japan

Masahiko Kinbara


Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 336(Granted Patents)


Company Filing History:


Years Active: 1992-1993

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2 patents (USPTO):Explore Patents

Title: Masahiko Kinbara: Innovator in Semiconductor Technology

Introduction

Masahiko Kinbara is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of integrated circuits.

Latest Patents

Kinbara's latest patents include a semiconductor integrated circuit featuring a DRAM cell unit and a high-density nonvolatile semiconductor integrated circuit. The first patent describes a Dynamic RAM (DRAM) cell unit that incorporates a first transistor connected to a capacitor, enhancing the cycle life of the DRAM cell unit. The second patent outlines a method for producing a field-effect transistor, which involves forming an impurity adsorption layer on a semiconductor surface to create a source and drain region with reduced dimensions and fast operating speed.

Career Highlights

Masahiko Kinbara is currently employed at Seiko Instruments Inc., where he continues to innovate in the semiconductor industry. His work has been instrumental in developing technologies that improve the efficiency and functionality of electronic devices.

Collaborations

Kinbara has collaborated with notable colleagues, including Naoto Saito and Kenji Aoki, contributing to advancements in semiconductor technology.

Conclusion

Masahiko Kinbara's contributions to semiconductor technology through his patents and work at Seiko Instruments Inc. highlight his role as a key innovator in the field. His advancements continue to influence the development of high-performance electronic devices.

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