The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1992
Filed:
Aug. 13, 1990
Applicant:
Inventors:
Naoto Saito, Tokyo, JP;
Kenji Aoki, Tokyo, JP;
Tadao Akamine, Tokyo, JP;
Yoshikazu Kojima, Tokyo, JP;
Kunihiro Takahashi, Tokyo, JP;
Masahiko Kinbara, Tokyo, JP;
Assignee:
Seiko Instruments, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437 44 ; 437 45 ; 437192 ; 437946 ;
Abstract
An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.
Published as: