Masaaki Momen

Title: Masaaki Momen: Innovator in Semiconductor Technology

Introduction

Masaaki Momen is a prominent inventor based in Ojiya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His innovative approaches have led to advancements in manufacturing methods for semiconductor devices.

Latest Patents

Momen's latest patents include a method of manufacturing insulated gate semiconductor devices. This invention features a gate electrode that includes a first polysilicon film remaining on a first oxide film, with a part of a second polysilicon layer superimposed on the polysilicon layer. The design ensures that the thickness of the gate electrode on the first gate oxide film matches that of prior art, while the thickness on the second gate oxide films is reduced. This innovation results in smaller height gaps between the gate electrode and the N+ type source and drain layers, enhancing the flatness of the interlayer oxide film. Another notable patent is for a semiconductor device that incorporates a P type well region within a P type semiconductor substrate. This device features at least three gate insulating films of varying thicknesses, with the ion implantation of impurities performed only under the thinnest gate insulating film.

Career Highlights

Masaaki Momen has worked with notable companies, including Sanyo Electric Co., Ltd. His career has been marked by a commitment to advancing semiconductor technology through innovative design and manufacturing processes.

Collaborations

Momen has collaborated with esteemed colleagues such as Nobuyuki Sekikawa and Wataru Andoh. Their combined expertise has contributed to the success of various projects in the semiconductor field.

Conclusion

Masaaki Momen's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in manufacturing methods and device design.