The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Sep. 08, 2003
Nobuyuki Sekikawa, Ashikaga, JP;
Koichi Hirata, Sanjyo, JP;
Masaaki Momen, Ojiya, JP;
Shinya Enomoto, Ojiya, JP;
Nobuyuki Sekikawa, Ashikaga, JP;
Koichi Hirata, Sanjyo, JP;
Masaaki Momen, Ojiya, JP;
Shinya Enomoto, Ojiya, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
This invention is directed to the reduction of voltage dependence and thus allows easy design of integrated semiconductor circuits. The device is equipped with a P− type resistance layer, in which a first voltage is applied to one end and a second voltage is applied to the other end and which is formed on the surface of an N-well region on the semiconductor substrate, a thin oxide film on the resistance layer, and a resistance bias electrode which includes the silicon layer formed on the thin oxide film. By adjusting the voltage applied to the resistance bias electrode, the voltage dependence of the resistance of the resistance layer is reduced.