The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Nov. 25, 2003
Nobuyuki Sekikawa, Ashikagai, JP;
Masaaki Momen, Ojiya, JP;
Wataru Andoh, Kamo, JP;
Koichi Hirata, Sanjyo, JP;
Nobuyuki Sekikawa, Ashikagai, JP;
Masaaki Momen, Ojiya, JP;
Wataru Andoh, Kamo, JP;
Koichi Hirata, Sanjyo, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A gate electrode includes a first polysilicon film remaining on a first oxide film, a part of a second polysilicon layersuperimposed on the polysilicon layer, and a part of the second polysilicon layer partially extending over second gate oxide films. Thus, the thickness of the gate electrode on the first gate oxide film is the same as that of the gate electrode of the prior art, but the film thickness tof the gate electrodeon the second gate oxide filmsA andB is thinner than the thickness tof the prior art. Therefore, the height gap hbetween the gate electrodeand the N+type source layerand the height gap hbetween the gate electrodeand the N+type drain layerbecome smaller compared to those of prior art, leading to the improved flatness of the interlayer oxide film