Alexandria, VA, United States of America

María González

This inventor holds 2 USPTO granted patents. Top assignee: USA as Represented by Secretary of the Navy. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: María González. Retrieved from https://idiyas.com/inventor/maría-gonzález

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Washington, DC (US) (2014)
  • Alexandria, VA (US) (2019)

Company Filing History:


Years Active: 2014-2019

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Inventor María González

Introduction

María González is a prominent inventor based in Alexandria, VA (US). He has made significant contributions to the field of semiconductor devices, holding a total of 2 patents. His work focuses on advanced technologies that enhance the functionality and efficiency of photodetectors and tunnel diodes.

Latest Patents

One of his latest patents is for a capacitive infrared photodetector comprising a quantum dot layer. This semiconductor device utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

Another notable patent is for tunnel diodes incorporating strain-balanced, quantum-confined heterostructures. This device features a strain-balanced quantum well tunnel junction (SB-QWTJ). Quantum well structures are formed from alternating quantum well and barrier layers situated between n-and p-type layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.

Career Highlights

María González works for the USA as represented by the Secretary of the Navy. His innovative work in semiconductor technology has positioned him as a key figure in the development of advanced electronic devices. His contributions have the potential to impact various applications in the field of electronics and photonics.

Collaborations

Some of his notable coworkers include Michael K. Yakes and Robert J. Walters. Their collaborative efforts have further advanced the research and development of innovative technologies in their field.

Conclusion

María González is a distinguished inventor whose work in semiconductor devices has led to significant advancements in technology. His patents reflect a deep understanding of quantum mechanics and materials science, showcasing his commitment to innovation. His contributions will undoubtedly continue to influence the field for years to

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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