The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Feb. 23, 2018
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Michael K. Yakes, Alexandria, VA (US);
María González, Alexandria, VA (US);
Phillip Jenkins, Cleveland Heights, OH (US);
Robert J. Walters, Alexandria, VA (US);
Antonio Marti Vega, Madrid, ES;
Elisa Antolín Fernández, Madrid, ES;
Esther López Estrada, Toledo, ES;
Abstract
A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.