The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Mar. 06, 2014
Matthew Lumb, Alexandria, VA (US);
Michael K. Yakes, Alexandria, VA (US);
María González, Washington, DC (US);
Christopher Bailey, Washington, DC (US);
Robert J. Walters, Alexandria, VA (US);
Matthew Lumb, Alexandria, VA (US);
Michael K. Yakes, Alexandria, VA (US);
María González, Washington, DC (US);
Christopher Bailey, Washington, DC (US);
Robert J. Walters, Alexandria, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between nand players in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.