Mary Ann Murphy

Title: Innovations of Mary Ann Murphy

Introduction

Mary Ann Murphy is a notable inventor based in Richardson, Texas. She has made significant contributions to the field of electronics, particularly in the development of advanced semiconductor technologies. With a total of two patents to her name, her work has had a considerable impact on the industry.

Latest Patents

Mary Ann Murphy's latest patents include a power transistor with a silicided gate and contacts. This invention describes a power field effect transistor that incorporates polysilicon gate bodies and platinum silicide contact layers. The design ensures that the platinum silicide layer is spaced apart from both gate bodies and contact layers. Another significant patent is related to high voltage merged bipolar/CMOS technology. This integrated circuit features PMOS, NMOS, and NPN transistors, designed for applications requiring both digital and analog circuits. The circuit allows standard CMOS cells to be utilized without the need for redesign, enhancing efficiency in semiconductor manufacturing.

Career Highlights

Mary Ann Murphy is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. Her work at Texas Instruments has allowed her to contribute to groundbreaking technologies that are essential for modern electronic devices.

Collaborations

Some of her notable coworkers include Louis N. Hutter and Jeffrey P. Smith. Their collaboration has fostered an environment of innovation and creativity within the company.

Conclusion

Mary Ann Murphy's contributions to the field of electronics through her patents and work at Texas Instruments Corporation highlight her role as a significant inventor. Her innovations continue to influence the development of advanced semiconductor technologies.