The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Oct. 07, 1998
John P. Erdeljac, Plano, TX (US);
Louis N. Hutter, Richardson, TX (US);
Jeffrey P. Smith, Plano, TX (US);
Han-Tzong Yuan, Dallas, TX (US);
Jau-Yuann Yang, Richardson, TX (US);
Taylor R. Efland, Richardson, TX (US);
C. Matthew Thompson, Highland Village, TX (US);
John K. Arch, Richardson, TX (US);
Mary Ann Murphy, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A power field effect transistor is disclosed that includes polysilicon gate bodies (,) and (,), which includes platinum silicide contact layers (,) and (,) disposed on the outer surfaces of bodies (,) and (,), respectively. In addition, the device comprises an n+drain region (,) which also has a platinum silicide drain contact layer (,) formed on its outer surface and platinum silicide source contact layers (,) and (,). During formation, sidewall spacers (,) and (,), as well as mask bodies (,) and (,) are used to ensure that platinum silicide layer (,) spaced apart from both gate bodies (,) and (,) and platinum silicide gate contact layers (,) and (,).