Winhoring, Germany

Martin Wengbauer

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Siltronic Ag. Active years: 2025.


% Patents Active = 100.0

 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Martin Wengbauer: Innovator in Epitaxial Layer Deposition

Introduction

Martin Wengbauer is a notable inventor based in Winhoering, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the method of depositing epitaxial layers on substrate wafers. His innovative approach has implications for the efficiency and quality of semiconductor manufacturing.

Latest Patents

Wengbauer holds a patent for a method that involves measuring the edge geometry of a substrate wafer. This method includes placing the wafer in a specific position within a pocket of a susceptor, heating the wafer, and passing a process gas over it. The technique assigns thickness characteristic values to edge portions based on the edge geometry, ensuring that the layer thicknesses are inversely related to the wafer thicknesses. This patent is a testament to his expertise and innovative thinking in the semiconductor industry. He has 1 patent to his name.

Career Highlights

Wengbauer is currently employed at Siltronic AG, a leading company in the production of silicon wafers. His work at Siltronic AG has allowed him to apply his innovative methods in a practical setting, contributing to advancements in semiconductor technology. His career reflects a commitment to excellence and innovation in his field.

Collaborations

Wengbauer collaborates with Thomas Stettner, a fellow professional in the industry. Their partnership exemplifies the collaborative spirit that drives innovation in technology.

Conclusion

Martin Wengbauer's contributions to the field of semiconductor technology through his innovative patent demonstrate his role as a key inventor in the industry. His work continues to influence the methods used in the deposition of epitaxial layers, showcasing the importance of innovation in advancing technology.

Profile summary based on public USPTO records.
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