The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jul. 21, 2021
Siltronic Ag, Munich, DE;
Thomas Stettner, Waging am See, DE;
Martin Wengbauer, Winhoering, DE;
SILTRONIC AG, Munich, DE;
Abstract
An epitaxial layer is deposited on a substrate wafer by a method including measuring an edge geometry of the wafer, placing the wafer at a position in a pocket of a susceptor of a device for depositing the layer based on the edge geometry, heating the wafer, and passing a process gas over the wafer. Thickness characteristic values are assigned to edge portions based on the edge geometry. The position in the pocket is determined as function of an expected change in the thickness characteristic value to an eccentricity E, which is determined by prior testing of the device. The function is a result of the shape of the pocket which has a boundary having a circular circumference. The distance from the wafer to the boundary of the pocket is less at thicker edge portions and greater at thinner edge portion so the layer has thicknesses inverse to the wafer thicknesses.