Company Filing History:

12 out of 12,867

Advanced Micro Devices Corporation

Years Active: 2003-2014

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16 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8883610 - Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines (2014-11-11),

2. 8389401 - Contact elements of semiconductor devices formed on the basis of a partially applied activation layer (2013-03-05),

3. 8323471 - Automatic deposition profile targeting (2012-12-04),

4. 8314494 - Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices (2012-11-20),

5. 7947158 - Apparatus and method for removing bubbles from a process liquid (2011-05-24),

6. 7899570 - Advanced automatic deposition profile targeting and control by applying advanced polish endpoint system feedback (2011-03-01),

7. 7781343 - Semiconductor substrate having a protection layer at the substrate back side (2010-08-24),

8. 7781329 - Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices (2010-08-24),

9. 7615103 - Apparatus and method for removing bubbles from a process liquid (2009-11-10),

10. 7560381 - Technique for metal deposition by electroless plating using an activation scheme including a substrate heating process (2009-07-14),

11. 7517782 - Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase (2009-04-14),

12. 7476552 - Method of reworking a semiconductor structure (2009-01-13),

13. 7169664 - Method of reducing wafer contamination by removing under-metal layers at the wafer edge (2007-01-30),

14. 6958247 - Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process (2005-10-25),

15. 6951816 - Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst (2005-10-04),

Title: Innovations of Inventor Markus Nopper

Introduction

Markus Nopper is a distinguished inventor based in Dresden, Germany. He holds a total of 16 patents that showcase his contributions to the field of semiconductor technology and metallization systems. His innovative work has significantly impacted the efficiency and performance of electronic devices.

Latest Patents

One of his latest patents is a microstructure device that includes a metallization structure with self-aligned air gaps between closely spaced metal lines. This invention allows for the formation of air gaps through a self-aligned patterning regime, which protects the conductive cap material of metal lines. This method enables the individual adjustment of etch behavior and electrical characteristics during the patterning process. Another notable patent involves contact elements of semiconductor devices formed based on a partially applied activation layer. This technique enhances the bottom-to-top fill behavior in contact levels, effectively suppressing deposition-related irregularities, such as voids, even in high aspect ratio contact openings.

Career Highlights

Throughout his career, Markus Nopper has worked with prominent companies in the semiconductor industry, including Advanced Micro Devices Corporation and Globalfoundries Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in technology.

Collaborations

Markus has collaborated with notable colleagues, including Axel Preusse and Robert Seidel. Their combined expertise has fostered a productive environment for innovation and development in their respective fields.

Conclusion

Markus Nopper's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the industry and pave the way for future advancements.

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