Markus Biebl

This inventor holds 16 USPTO granted patents, primarily in Micromechanical Sensors. Top assignees: Siemens Aktiengesellschaft, Infineon Technologies Ag. Active years: 1994-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Markus Biebl. Retrieved from https://idiyas.com/inventor/markus-biebl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 229(Granted Patents)

Location History:

Munich, DE (1994 - 1995)
Augsburg, DE (1997 - 2002)

Company Filing History:

14 out of 30,893

Siemens Aktiengesellschaft

patents

2 out of 15,040

Infineon Technologies Ag

patents

Years Active: 1994-2002

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Areas of Expertise:

Silicon Layer

Digital Circuit

Micromechanical Component

CMOS Circuit

Tunnel Effect Sensor

Acceleration Sensor

Pressure Sensor

Manufacturing Method

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6410407 - Product including a silicon-containing functional layer and an insulating layer made of silicon dioxide, and method fabricating the product (2002-06-25),

2. 6389086 - Digital circuit having a filter unit for suppressing glitches (2002-05-14),

3. 5939171 - Micromechanical component (1999-08-17),

4. 5913115 - Method for producing a CMOS circuit (1999-06-15),

5. 5911157 - Tunnel effect sensor (1999-06-08),

6. 5877421 - Acceleration sensor (1999-03-02),

7. 5834332 - Micromechanical semiconductor components and manufacturing method (1998-11-10),

8. 5760455 - Micromechanical semiconductor component and manufacturing method therefor (1998-06-02),

9. 5753134 - Method for producing a layer with reduced mechanical stresses (1998-05-19),

10. 5700702 - Method for manufacturing an acceleration sensor (1997-12-23),

11. 5700379 - Method for drying micromechanical components (1997-12-23),

12. 5472916 - Method for manufacturing tunnel-effect sensors (1995-12-05),

13. 5450754 - Pressure sensor (1995-09-19),

14. 5447067 - Acceleration sensor and method for manufacturing same (1995-09-05),

15. 5431051 - Tunnel effect acceleration sensor (1995-07-11),

Title: Innovations of Inventor Markus Biebl

Introduction

Markus Biebl is a prominent inventor based in Augsburg, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the functionality and efficiency of digital circuits and semiconductor products.

Latest Patents

Among his latest patents is a product that includes a silicon-containing functional layer and an insulating layer made of silicon dioxide. This semiconductor product features a stop layer made of silicon nitride, which acts as a diffusion barrier between the functional layer and the insulating layer. The method for fabricating this product involves implanting nitrogen into the insulating layer and heat treating the blank part, allowing the nitrogen to bond with silicon to form the stop layer. Another notable patent is a digital circuit that incorporates a filter unit designed to suppress glitches on digital signals, ensuring more reliable signal processing.

Career Highlights

Markus Biebl has worked with leading companies in the technology sector, including Siemens Aktiengesellschaft and Infineon Technologies AG. His experience in these organizations has allowed him to develop innovative solutions that address complex challenges in semiconductor design and digital circuit functionality.

Collaborations

Throughout his career, Markus has collaborated with notable professionals in the field, including Thomas Scheiter and Helmut Klose. These partnerships have contributed to the advancement of his inventions and the successful implementation of his patented technologies.

Conclusion

Markus Biebl's contributions to semiconductor technology and digital circuits have established him as a key figure in innovation. His patents reflect a commitment to enhancing the performance and reliability of electronic devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]