Siemens Aktiengesellschaft

Infineon Technologies Ag

Markus Biebl

Helmut Klose

Thomas Scheiter

Christofer Hierold

Emmerich Bertagnolli

Udo Schwalke

Stephan Pindl

Thoai-Thai Le

Herbert Schaefer

Eckhard Brass

Ulrich Naeher

Max Steger

Dirk Schumann

A semiconductor product includes a silicon-containing functional layer, an insulating layer made of silicon dioxide, and a stop layer made of silicon nitride, which is disposed between the functional layer and the insulating layer and bonds the functional layer to the insulating layer. The stop layer acts as a diffusion barrier between the functional layer and the insulating layer. A method for fabricating this product starts out with a blank part having the functional layer and the insulating layer. The stop layer is formed by implanting nitrogen into the insulating layer and subsequently heat treating the blank part. As a result of the heat treatment the nitrogen diffuses to the functional layer where it bonds to the silicon in order to form the stop layer.

Product including a silicon-containing functional layer and an insulating layer made of silicon dioxide, and method fabricating the product

A digital circuit has a signal input terminal and a signal output terminal. The digital circuit additionally has a logic circuit unit, whose input is connected to the signal input terminal and whose output is connected to the signal output terminal via a switching element. Furthermore, it has a filter unit, whose input is connected to the signal input terminal and whose output is connected to a control input of the switching element. The filter unit serves for suppressing glitches on a digital signal present at its input.

Digital circuit having a filter unit for suppressing glitches

Micromechanical component

In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.

Method for producing a CMOS circuit

Tunnel effect sensor

An acceleration sensor has a mass part movably attached over a substrate with pairs of electrodes arranged relative to the mass part so that one electrode of each pair is under the mass part and the other electrode of that pair is arranged above the mass part. The electrodes are attached immovably to the substrate. Controllable electrical voltages can be applied such via an electronic drive circuit to the electrically conductively doped mass part and to these electrodes so that excursions of the mass part can be electrostatically compensated and, at the same time, the magnitude of inertial forces acting on the mass part, and thus the magnitude of accelerations, can be measured.

Acceleration sensor

A component having a movable micro mechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.

Micromechanical semiconductor components and manufacturing method

A component having a movable micromechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.

Micromechanical semiconductor component and manufacturing method therefor

For producing a layer having reduced mechanical stresses, the layer is composed of at least two sub-layers that are matched to one another such that stress gradients in the two layers substantially compensate. The method is particularly employable in the manufacture of structures in surface micromechanics.

Method for producing a layer with reduced mechanical stresses

A micromechanical structure is etched on a component that has been introduced into a container having a plurality of inlet and discharge openings. The liquid etchant is displaced downwardly through a liquid discharge at the underside of the container by admitting water through the liquid inlet at the upper side, whereby no turbulence occurs in the liquid flow. The water employed as a rinsing agent is displaced by a liquid having a lower density such as, for example, ethanol or acetone. Finally, a liquefied gas, for example liquid carbon dioxide, is admitted via the liquid, this gas is evaporated by heating the container above the critical temperature, the pressure in the inside of the container is reduced to the ambient air pressure by opening a gas discharge, and the component is removed from the container through a sluice or lock.

Method for drying micromechanical components

Method for manufacturing an acceleration sensor

In a method for manufacturing tunnel-effect sensors, a tip (2) composed of the silicon of the substrate (1) is produced on a substrate (1) of silicon with electrically conductively doped regions (4) by oxidation of the silicon using a nitride mask on the surface. Using the planarized oxide layer (5) produced in the oxidation step, a beam (3) of polysilicon that is anchored on the substrate (1) is applied, for example, over the tip (2) as a cooperating electrodes for the utilization of the tunnel effect and is electrically conductively doped. Subsequently, the oxide layer (5) is removed.

Method for manufacturing tunnel-effect sensors

A pressure sensor comprises a matrix of diaphragms of polysilicon which, via a structure of electrical conductors, are arranged at an upper side of a silicon substrate for the determination of their variable electrical capacitance dependent on the pressure stressing. These diaphragms are present in at least two different sizes. Capacitances of these diaphragms of a same size are respectively connected to form a sub-unit such that basic capacitances of these sub-units are of a respectively same size.

Pressure sensor

An acceleration sensor has a proof mass attached by resilient elements, in the form of micromechanical components, in a monocrystalline silicon layer of an SOI (silicon-on-insulator) substrate, the insulator layer of the substrate being removed under the structure which is susceptible to acceleration, in order to enable free mobility of the micromechanical components. Piezoresistors are provided for detecting movement of the proof mass, the piezoresistors supplying electrical signals to an evaluation circuit.

Acceleration sensor and method for manufacturing same

An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also changing the tunnel current, which is measured. Electrodes are provided that, given application of a potential thereto, effect an electrostatic compensation of the bending of the beam.

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Augsburg, Germany

Markus Biebl