The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2002
Filed:
Mar. 30, 2000
Stephan Pindl, Petershausen, DE;
Markus Biebl, Augsburg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor product includes a silicon-containing functional layer, an insulating layer made of silicon dioxide, and a stop layer made of silicon nitride, which is disposed between the functional layer and the insulating layer and bonds the functional layer to the insulating layer. The stop layer acts as a diffusion barrier between the functional layer and the insulating layer. A method for fabricating this product starts out with a blank part having the functional layer and the insulating layer. The stop layer is formed by implanting nitrogen into the insulating layer and subsequently heat treating the blank part. As a result of the heat treatment the nitrogen diffuses to the functional layer where it bonds to the silicon in order to form the stop layer.