Markku Leskelä

Title: Markku Leskelä: Innovator in Metal Thin Film Technology

Introduction

Markku Leskelä is a prominent inventor based in Espoo, Finland. He has made significant contributions to the field of materials science, particularly in the development of processes for producing metal thin films. With a total of 4 patents to his name, Leskelä's work has advanced the technology used in various electronic applications.

Latest Patents

Leskelä's latest patents include a process for producing metal thin films by atomic layer deposition (ALD). This invention focuses on creating electrically conductive noble metal thin films on substrates. The process involves pulsing a vaporized precursor of a noble metal into a reaction chamber, where it interacts with the substrate surface. This method allows for the deposition of high-quality metal thin films, particularly in structures with high aspect ratio vias and trenches.

Another notable patent is a method for preparing metal nitride thin films. This technique utilizes atomic layer deposition processes that involve alternate surface reactions of metal and nitrogen source materials. The resulting nitride thin layers exhibit low resistivity and are particularly suitable for use as diffusion barrier layers in integrated circuits.

Career Highlights

Throughout his career, Markku Leskelä has worked with several notable companies, including ASM International N.V. and ASM Microchemistry Ltd. His expertise in atomic layer deposition has positioned him as a key figure in the advancement of thin film technologies.

Collaborations

Leskelä has collaborated with esteemed colleagues such as Mikko Ritala and Petra Alén. These partnerships have further enriched his research and development efforts in the field of materials science.

Conclusion

Markku Leskelä's innovative work in metal thin film technology has made a lasting impact on the electronics industry. His patents reflect a commitment to advancing materials science and improving the performance of electronic devices.